Identification of preoperative risk factors associated with prolonged length of stay after lobectomy.

Objective: To examine the association between length of stay (LOS) after lobectomy and operative adverse events and define the best predictors and risk factors associated with prolonged LOS after lobectomy. Methods: Data from patients undergoing thoracoscopic lobectomy in the Thoracic Surgery Department of our center between January 2015 and December 2021 were retrospectively analyzed. The association between operative adverse events and LOS after lobectomy was explored using receiver operating characteristic (ROC) curves, and multivariate logistic regression analyses were used to identify preoperative risk factors associated with prolonged LOS after lobectomy. Results: Prolonged LOS after lobectomy was defined as a LOS after lobectomy that is > 3.5 days based on an optimal diagnostic value for operative adverse events (AUC = 0.882). Of the included patients, 20.9% (91/435) exceeded this threshold, of whom 52.7% (48/91) exhibited operative adverse events. The preoperative risk factors associated with prolonged LOS after lobectomy were age≥60 years old (OR = 9.632, 95%CI 1.126-75.66, p = 0.03), being a current smoker (OR = 2.702, 95%CI 1.547-4.72, P < 0.001), an American Society of Anesthesiology (ASA) classification of 2 or higher (OR = 1.845, 95%CI 1.06-3.211, P = 0.03), ASA = 3 (OR = 9.133, 95%CI 3.281-25.425, P < 0.001), and Stage IIIA disease (OR = 6.565, 95%CI 2.823-15.271, P < 0.001). Prolonged LOS after lobectomy was significantly associated with the incidence of different operative adverse events, including conversion to thoracotomy, an operative duration of ≥300 min, blood transfusion events, chest tube drainage time, postoperative complications, and postoperative interventions (P < 0.001). Conclusion: The risk of prolonged LOS after lobectomy is higher in patients that are ≥60 years old, current smokers, exhibit an ASA classification of 2 or higher, and have a stage IIIA disease. Early identification of these risk factors can enhance the treatment offered to high-risk patients, thereby reducing the rates of operative adverse events and optimizing resource utilization.

Applying Attachment Theory to Explain Boundary-spanning Behavior: The Role of Organizational Support Climate / La utilización de la teoría del apego para explicar el comportamiento de expansión de límites: el papel del clima de apoyo organizativo

Boundary spanning has been proven to have positive implications for innovation performance; yet, some individuals are less boundary-spanning than others. Drawing on the attachment theory and organizational support theory, this study develops a multi-level theoretical model to investigate how individuals’ attachment insecurity influences boundary-spanning behavior through self-efficacy and the moderating role of organizational support climate. To validate the proposed model, we adopted a survey research, and collected data from NPD project teams in China. The results revealed that both insecure attachment styles were associated with lower levels of individual boundary-spanning behavior, and self-efficacy partially mediated these relationships. Moreover, organizational support climate played a moderating role in the relationship between attachment anxiety and boundary-spanning behavior. With a high level of support climate, the negative impact of attachment anxiety on boundary-spanning behavior was weakened. This elucidates the role of individual affective motivation and team shared perceptions in shaping individual externally focused behavior.(AU)

Se ha demostrado que la expansión de límites tiene implicaciones positivas para la aplicación de la innovación, si bien algunas personas tienen menos desarrollada dicha característica. Partiendo de la teoría del apego y de la del apoyo organizativo, este estudio desarrolla un modelo teórico multinivel para investigar cómo influye la inseguridad del apego en el comportamiento de expansión de límites por medio de la autoeficacia y el rol moderador del clima de apoyo organizativo. Para validar el modelo propuesto adoptamos una investigación de encuesta, recogiendo datos de los equipos del proyecto NPD de China. Los resultados ponen de manifiesto que los estilos de apego inseguro están asociados con un menor comportamiento de expansión de límites y que la autoeficacia mediatiza parcialmente estas relaciones. Además, el clima de apoyo organizativo juega un papel moderador de la relación entre la ansiedad de apego y el comportamiento de expansión de límites. La repercusión negativa de la ansiedad de apego en el comportamiento de expansión de límites se atenúa cuando el clima de apoyo es elevado. Todo esto aclara el papel de la motivación afectiva y de la percepción compartida en equipo en la formación del comportamiento individual dirigido al exterior.(AU)

Synthesis of Cu-Modified Nickel Oxide Nanocrystals and Their Applications as Hole-Injection layers for Quantum-Dot Light-Emitting Diodes.

Solution-processed NiOx thin films have been applied as hole-injection layers (HILs) in quantum-dot light-emitting diodes (QLEDs). The commonly used NiOx HILs are prepared by the precursor-based route, which requires high annealing temperatures of over 275 °C to in situ convert the precursors into oxide films. Such high processing temperatures of NiOx HILs hinder their applications in flexible devices. Herein, we report a low-temperature approach based on Cu-modified NiOx (NiOx -Cu) nanocrystals to prepare HILs. A simple post-synthetic surface-modification step, which anchors the copper agents onto the surfaces of oxide nanocrystals, is developed to improve the electrical conductivity of the low-temperature-processed (135 °C) oxide-nanocrystal thin films. In consequence, QLEDs based on the NiOx -Cu HILs exhibit an external quantum efficiency of 17.5 % and a T95 operational lifetime of ∼2,800 h at an initial brightness of 1,000 cd m-2 , meeting the commercialization requirements for display applications. The results shed light on the potential of using NiOx -Cu HILs for realizing high-performance flexible QLEDs.

Colloidal metal oxide nanocrystals as charge transporting layers for solution-processed light-emitting diodes and solar cells.

Colloidal metal oxide nanocrystals offer a unique combination of excellent low-temperature solution processability, rich and tuneable optoelectronic properties and intrinsic stability, which makes them an ideal class of materials as charge transporting layers in solution-processed light-emitting diodes and solar cells. Developing new material chemistry and custom-tailoring processing and properties of charge transporting layers based on oxide nanocrystals hold the key to boosting the efficiency and lifetime of all-solution-processed light-emitting diodes and solar cells, and thereby realizing an unprecedented generation of high-performance, low-cost, large-area and flexible optoelectronic devices. This review aims to bridge two research fields, chemistry of colloidal oxide nanocrystals and interfacial engineering of optoelectronic devices, focusing on the relationship between chemistry of colloidal oxide nanocrystals, processing and properties of charge transporting layers and device performance. Synthetic chemistry of colloidal oxide nanocrystals, ligand chemistry that may be applied to colloidal oxide nanocrystals and chemistry associated with post-deposition treatments are discussed to highlight the ability of optimizing processing and optoelectronic properties of charge transporting layers. Selected examples of solution-processed solar cells and light-emitting diodes with oxide-nanocrystal charge transporting layers are examined. The emphasis is placed on the correlation between the properties of oxide-nanocrystal charge transporting layers and device performance. Finally, three major challenges that need to be addressed in the future are outlined. We anticipate that this review will spur new material design and simulate new chemistry for colloidal oxide nanocrystals, leading to charge transporting layers and solution-processed optoelectronic devices beyond the state-of-the-art.

Solution-processed, high-performance light-emitting diodes based on quantum dots.

Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades. However, the overall performance of solution-processed LEDs--including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions-remains inferior to that of the best vacuum-deposited organic LEDs. Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm(-2)), and a long operational lifetime of more than 100,000 hours at 100 cd m(-2), making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs. This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.

Synthesis of unstable colloidal inorganic nanocrystals through the introduction of a protecting ligand.

We demonstrate a facile and general strategy based on ligand protection for the synthesis of unstable colloidal nanocrystals by using the synthesis of pure p-type NiO nanocrystals as an example. We find that the introduction of lithium stearate, which is stable in the reaction system and capable of binding to the surface of NiO oxide nanocrystals, can effectively suppress the reactivity of NiO nanocrystals and thus prevent their in situ reduction into Ni. The resulting p-type NiO nanocrystals, a highly demanded hole-transporting and electron-blocking material, are applied to the fabrication of organic solar cells and polymer light-emitting diodes, demonstrating their great potential as an interfacial layer for low-cost and large-area, solution-processed optoelectronic devices.